IGBT 晶体管 Infineon"s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
Summary of Features:
Benefits:
耗散功率 130000 mW
击穿电压集电极-发射极 600 V
反向恢复时间 34 ns
额定功率Max 130 W
工作温度Max 175 ℃
工作温度Min -40 ℃
耗散功率Max 130000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -40℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Other hard switching applications
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99