650V的CoolMOS E6功率晶体管 650V CoolMOS E6 Power Transistor
Description:
CoolMOS™ E6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Summary of Features:
Benefits:
Target Applications:
极性 N-CH
耗散功率 83 W
漏源极电压Vds 700 V
连续漏极电流Ids 10.6A
上升时间 7 ns
输入电容Ciss 710pF @100VVds
额定功率Max 83 W
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 83000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD65R380E6 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD65R380C6 英飞凌 | 类似代替 | IPD65R380E6和IPD65R380C6的区别 |