IPD075N03LGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD075N03LGATMA1, 50 A, Vds=30 V, 3引脚 DPAK TO-252封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 50A TO252-3

立创商城:
N沟道 30V 50A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD075N03LGATMA1, 50 A, Vds=30 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET N-Ch 30V 50A DPAK-2

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 50 A, 0.0063 ohm, TO-252 DPAK, 表面安装

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPD075N03LGATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 47000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.

Chip1Stop:
Trans MOSFET N-CH 30V 50A 3-Pin2+Tab TO-252

TME:
Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3

Verical:
Trans MOSFET N-CH 30V 50A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 30V 50A TO252-3