D2PAK N-CH 700V 20.2A
表面贴装型 N 通道 20.2A（Tc） 151W（Tc） D²PAK（TO-263AB）
得捷:
MOSFET N-CH 650V 20.2A D2PAK
贸泽:
MOSFET HIGH POWER_LEGACY
艾睿:
Make an effective common source amplifier using this IPB65R190C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 151000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
PMCspan board, Secondary PMC expansion for PMCSPAN26E-002 w/IEEE handles, 6E
TME:
Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO263-3
Verical:
Trans MOSFET N-CH 700V 20.2A 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 650V 20.2A D2PAK / N-Channel 650 V 20.2A Tc 151W Tc Surface Mount PG-TO263-3
额定功率 151 W
通道数 1
极性 N-CH
耗散功率 151 W
漏源极电压Vds 650 V
连续漏极电流Ids 20.2A
上升时间 12 ns
输入电容Ciss 1620pF @100VVds
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 151W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅