TO-268 N-CH 1000V 6A
Increase the current or voltage in your circuit with this power MOSFET from Ixys Corporation. Its maximum power dissipation is 180000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.
得捷:
MOSFET N-CH 1000V 6A TO268
艾睿:
Trans MOSFET N-CH 1KV 6A 3-Pin2+Tab TO-268
极性 N-CH
耗散功率 180000 mW
漏源极电压Vds 1000 V
连续漏极电流Ids 6A
上升时间 15 ns
输入电容Ciss 2200pF @25VVds
额定功率Max 180 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 180W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-268-3
封装 TO-268-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99