N沟道 1kV 20A
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
得捷:
MOSFET N-CH 1000V 20A TO247AD
立创商城:
N沟道 1kV 20A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFH20N100P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 1KV 20A 3-Pin3+Tab TO-247
Win Source:
MOSFET N-CH 1000V 20A TO-247
通道数 1
极性 N-CH
耗散功率 660 W
阈值电压 6.5 V
漏源极电压Vds 1000 V
连续漏极电流Ids 20A
上升时间 37 ns
输入电容Ciss 7300pF @25VVds
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 660W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
宽度 5.3 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXFH20N100P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFT20N100P IXYS Semiconductor | 完全替代 | IXFH20N100P和IXFT20N100P的区别 |