IXTA8N50P 管装
N-Channel 500V 8A Tc 150W Tc Surface Mount TO-263 IXTA
得捷:
MOSFET N-CH 500V 8A TO263
立创商城:
N沟道 500V 8A
艾睿:
Amplify electronic signals and switch between them with the help of Ixys Corporation&s;s IXTA8N50P power MOSFET. Its maximum power dissipation is 150000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
富昌:
N-Channel 500 V 8 A 800 mΩ Surface Mount PolarHV Power Mosfet - TO-263
Chip1Stop:
Trans MOSFET N-CH 500V 8A 3-Pin2+Tab TO-263
TME:
Transistor: N-MOSFET; unipolar; 500V; 8A; 150W; TO263
Verical:
Trans MOSFET N-CH 500V 8A 3-Pin2+Tab D2PAK
DeviceMart:
MOSFET N-CH 500V 8A D2-PAK
额定电压DC 500 V
额定电流 8.00 A
耗散功率 150 W
栅电荷 20.0 nC
漏源极电压Vds 500 V
连续漏极电流Ids 8.00 A
上升时间 28 ns
输入电容Ciss 1050 pF
下降时间 23 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXTA8N50P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTP8N50P IXYS Semiconductor | 类似代替 | IXTA8N50P和IXTP8N50P的区别 |
IXTA8PN50P IXYS Semiconductor | 类似代替 | IXTA8N50P和IXTA8PN50P的区别 |
STB11NK50ZT4 意法半导体 | 功能相似 | IXTA8N50P和STB11NK50ZT4的区别 |