N沟道 500V 12A
Trans MOSFET N-CH 500V 12A 3-Pin3+Tab TO-220
立创商城:
N沟道 500V 12A
得捷:
MOSFET N-CH 500V 12A TO220AB
艾睿:
Make an effective common gate amplifier using this IXTP12N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 200000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
TME:
Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Verical:
Trans MOSFET N-CH 500V 12A 3-Pin3+Tab TO-220
Online Components:
Trans MOSFET N-CH 500V 12A 3-Pin3+Tab TO-220
额定电压DC 500 V
额定电流 12.0 A
耗散功率 200 W
输入电容 1.69 nF
栅电荷 29.0 nC
漏源极电压Vds 500 V
连续漏极电流Ids 12.0 A
上升时间 27 ns
输入电容Ciss 1830pF @25VVds
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXTP12N50P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFP12N50P IXYS Semiconductor | 完全替代 | IXTP12N50P和IXFP12N50P的区别 |
IXTI12N50P IXYS Semiconductor | 完全替代 | IXTP12N50P和IXTI12N50P的区别 |
IXFA12N50P IXYS Semiconductor | 类似代替 | IXTP12N50P和IXFA12N50P的区别 |