通孔 N 通道 1000V 44A（Tc） 1250W（Tc） PLUS264™
Compared to traditional transistors, power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFB44N100P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFB44N100Q3 IXYS Semiconductor | 类似代替 | IXFB44N100P和IXFB44N100Q3的区别 |
IXFK40N90P IXYS Semiconductor | 类似代替 | IXFB44N100P和IXFK40N90P的区别 |
IXFX40N90P IXYS Semiconductor | 功能相似 | IXFB44N100P和IXFX40N90P的区别 |