Trans MOSFET N-CH 800V 60A 3Pin3+Tab PLUS 264
N-Channel 800V 60A Tc 1250W Tc Through Hole PLUS264™
得捷:
MOSFET N-CH 800V 60A PLUS264
贸泽:
MOSFET 60 Amps 800V 0.14 Rds
艾睿:
This IXFB60N80P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 1250000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.
TME:
Transistor: N-MOSFET; unipolar; 800V; 60A; 1250W; PLUS264; 250ns
Verical:
Trans MOSFET N-CH 800V 60A 3-Pin3+Tab PLUS 264
DeviceMart:
MOSFET N-CH 800V 60A PLUS264
通道数 1
漏源极电阻 140 mΩ
耗散功率 1.25 kW
阈值电压 5 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
上升时间 29 ns
输入电容Ciss 18000pF @25VVds
额定功率Max 1250 W
下降时间 26 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1250W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
长度 20.29 mm
宽度 5.31 mm
高度 26.59 mm
封装 TO-264-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFB60N80P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFB62N80Q3 IXYS Semiconductor | 类似代替 | IXFB60N80P和IXFB62N80Q3的区别 |