TO-264AA N-CH 1000V 24A
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation"s power MOSFET can provide a solution. Its maximum power dissipation is 560000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 1.00 kV
额定电流 24.0 A
额定功率 560 W
漏源极电阻 390 mΩ
极性 N-CH
耗散功率 560 W
漏源极电压Vds 1000 V
连续漏极电流Ids 24.0 A
上升时间 35 ns
输入电容Ciss 8700pF @25VVds
额定功率Max 560 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 560W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
高度 26.16 mm
封装 TO-264-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFK24N100 IXYS Semiconductor | 当前型号 | 当前型号 |
APT10040LVRG 美高森美 | 功能相似 | IXFK24N100和APT10040LVRG的区别 |