IXTP 系列 单通道 N 沟道 100 V 18 mOhm 176 W 功率 Mosfet - TO-220
Amplify electronic signals and switch between them with the help of Ixys Corporation"s power MOSFET. Its maximum power dissipation is 176000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
得捷:
MOSFET N-CH 100V 60A TO220AB
立创商城:
N沟道 100V 60A
贸泽:
MOSFET MOSFET Id60 BVdass100
艾睿:
Amplify electronic signals and switch between them with the help of Ixys Corporation&s;s IXTP60N10T power MOSFET. Its maximum power dissipation is 176000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Verical:
Trans MOSFET N-CH 100V 60A Automotive 3-Pin3+Tab TO-220AB
Win Source:
MOSFET N-CH 100V 60A TO-220
漏源极电阻 18.0 mΩ
极性 N-Channel
耗散功率 176 W
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 60.0 A
上升时间 40 ns
输入电容Ciss 2650pF @25VVds
额定功率Max 176 W
下降时间 37 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 176W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.66 mm
宽度 4.82 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free