TO-220 N-CH 1200V 6A
通孔 N 通道 6A(Tc) 250W(Tc) TO-220AB
得捷:
MOSFET N-CH 1200V 6A TO220AB
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFP6N120P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 250000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
Verical:
Trans MOSFET N-CH 1.2KV 6A 3-Pin3+Tab TO-220AB
Win Source:
MOSFET N-CH 1200V 6A TO220AB / N-Channel 1200 V 6A Tc 250W Tc Through Hole TO-220-3
极性 N-CH
耗散功率 250 W
阈值电压 5 V
漏源极电压Vds 1200 V
连续漏极电流Ids 6A
上升时间 11 ns
输入电容Ciss 2830pF @25VVds
下降时间 14 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
宽度 4.83 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXFP6N120P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFH6N120P IXYS Semiconductor | 功能相似 | IXFP6N120P和IXFH6N120P的区别 |
IXFA6N120P IXYS Semiconductor | 功能相似 | IXFP6N120P和IXFA6N120P的区别 |