IXFP6N120P

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IXFP6N120P概述

TO-220 N-CH 1200V 6A

通孔 N 通道 6A(Tc) 250W(Tc) TO-220AB


得捷:
MOSFET N-CH 1200V 6A TO220AB


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFP6N120P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 250000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.


Verical:
Trans MOSFET N-CH 1.2KV 6A 3-Pin3+Tab TO-220AB


Win Source:
MOSFET N-CH 1200V 6A TO220AB / N-Channel 1200 V 6A Tc 250W Tc Through Hole TO-220-3


IXFP6N120P中文资料参数规格
技术参数

极性 N-CH

耗散功率 250 W

阈值电压 5 V

漏源极电压Vds 1200 V

连续漏极电流Ids 6A

上升时间 11 ns

输入电容Ciss 2830pF @25VVds

下降时间 14 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 250W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

宽度 4.83 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

香港进出口证 NLR

数据手册

在线购买IXFP6N120P
型号: IXFP6N120P
制造商: IXYS Semiconductor
描述:TO-220 N-CH 1200V 6A
替代型号IXFP6N120P
型号/品牌 代替类型 替代型号对比

IXFP6N120P

IXYS Semiconductor

当前型号

当前型号

IXFH6N120P

IXYS Semiconductor

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