IXFN38N100P

IXFN 系列 单 N 沟道 1000 Vds 210 mOhm 1000 W 功率 Mosfet - SOT-227B

底座安装 N 通道 38A（Tc） 1000W（Tc） SOT-227B

得捷:
MOSFET N-CH 1000V 38A SOT-227B

立创商城:
N沟道 1kV 38A 一个物料配4个螺丝

贸泽:
MOSFET 38 Amps 1000V

艾睿:
Make an effective common source amplifier using this IXFN38N100P power MOSFET from Ixys Corporation. Its maximum power dissipation is 1000000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.

Verical:
Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B