IXTA32P20T

P沟道 200V 32A

表面贴装型 P 通道 32A（Tc） 300W（Tc） TO-263（IXTA）

得捷:
MOSFET P-CH 200V 32A TO263

立创商城:
P沟道 200V 32A

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXTA32P20T power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device is made with trenchp technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.