IXFA3N120

IXFA Series 1200V 4.5Ω SMT N-Channel HiPerFET Power Mosfet - TO-263-3

N-Channel 1200V 3A Tc 200W Tc Surface Mount TO-263 IXFA

得捷:
MOSFET N-CH 1200V 3A TO263

艾睿:
Make an effective common gate amplifier using this IXFA3N120 power MOSFET from Ixys Corporation. Its maximum power dissipation is 200000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.

Verical:
Trans MOSFET N-CH 1.2KV 3A 3-Pin2+Tab D2PAK

Win Source:
MOSFET N-CH 1200V 3A TO263 / N-Channel 1200 V 3A Tc 200W Tc Surface Mount TO-263 IXFA