Trans MOSFET N-CH 600V 26A 3Pin2+Tab TO-268
VDSS = 600 V
ID25 = 26 A
RDSon ≤ 270 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Features
Fast Recovery diode
Unclamped Inductive Switching UIS rated
International standard packages
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
得捷:
MOSFET N-CH 600V 26A TO268
艾睿:
Trans MOSFET N-CH 600V 26A 3-Pin2+Tab TO-268
额定电压DC 600 V
额定电流 26.0 A
通道数 1
漏源极电阻 270 mΩ
极性 N-Channel
耗散功率 460W Tc
输入电容 4.15 nF
栅电荷 72.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 26.0 A
上升时间 27 ns
输入电容Ciss 4150pF @25VVds
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 460W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-268-3
宽度 14 mm
封装 TO-268-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFT26N60P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFH26N60P IXYS Semiconductor | 完全替代 | IXFT26N60P和IXFH26N60P的区别 |
IXTH26N60P IXYS Semiconductor | 类似代替 | IXFT26N60P和IXTH26N60P的区别 |
IXTT26N60P IXYS Semiconductor | 类似代替 | IXFT26N60P和IXTT26N60P的区别 |