N沟道 600V 26A
N-Channel 600V 26A Tc 460W Tc Through Hole TO-247 IXTH
得捷:
MOSFET N-CH 600V 26A TO247
立创商城:
N沟道 600V 26A
艾睿:
Increase the current or voltage in your circuit with this IXTH26N60P power MOSFET from Ixys Corporation. Its maximum power dissipation is 460000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Verical:
Trans MOSFET N-CH 600V 26A 3-Pin3+Tab TO-247AD
额定电压DC 600 V
额定电流 26.0 A
极性 N-CH
耗散功率 460 W
输入电容 4.15 nF
栅电荷 72.0 nC
漏源极电压Vds 600 V
连续漏极电流Ids 26.0 A
上升时间 27 ns
输入电容Ciss 4150pF @25VVds
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 460W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXTH26N60P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTV26N60PS IXYS Semiconductor | 完全替代 | IXTH26N60P和IXTV26N60PS的区别 |
IXFH28N60P3 IXYS Semiconductor | 类似代替 | IXTH26N60P和IXFH28N60P3的区别 |
IXFH26N60P IXYS Semiconductor | 类似代替 | IXTH26N60P和IXFH26N60P的区别 |