N沟道 500V 22A
N-Channel Enhancement Mode Avalanche Rated
Features
International standard packages
Unclamped Inductive Switching UIS rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
得捷:
MOSFET N-CH 500V 22A TO3P
立创商城:
N沟道 500V 22A
贸泽:
MOSFET 22.0 Amps 500 V 0.27 Ohm Rds
艾睿:
Increase the current or voltage in your circuit with this IXTQ22N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 350000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 500V 22A 3-Pin3+Tab TO-3P
Online Components:
Trans MOSFET N-CH 500V 22A 3-Pin3+Tab TO-3P
Win Source:
MOSFET N-CH 500V 22A TO-3P
额定电压DC 500 V
额定电流 22.0 A
通道数 1
漏源极电阻 270 mΩ
耗散功率 350 W
输入电容 2.63 nF
栅电荷 50.0 nC
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 22.0 A
上升时间 25 ns
输入电容Ciss 2630pF @25VVds
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 350W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 4.9 mm
高度 20.3 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXTQ22N50P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFH22N50P IXYS Semiconductor | 完全替代 | IXTQ22N50P和IXFH22N50P的区别 |
IXTQ460P2 IXYS Semiconductor | 类似代替 | IXTQ22N50P和IXTQ460P2的区别 |
IXFQ24N50P2 IXYS Semiconductor | 类似代替 | IXTQ22N50P和IXFQ24N50P2的区别 |