IXFT20N100P

TO-268 N-CH 1000V 20A

表面贴装型 N 通道 1000 V 20A（Tc） 660W（Tc） TO-268AA

得捷:
MOSFET N-CH 1000V 20A TO268

艾睿:
As an alternative to traditional transistors, the IXFT20N100P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 660000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.

Verical:
Trans MOSFET N-CH 1KV 20A 3-Pin2+Tab D3PAK