Trans MOSFET N-CH 500V 48A 3Pin3+Tab PLUS 247
As an alternative to traditional transistors, the power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 500000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
得捷:
MOSFET N-CH 500V 48A PLUS247-3
艾睿:
As an alternative to traditional transistors, the IXFX48N50Q power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 500000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
Verical:
Trans MOSFET N-CH 500V 48A 3-Pin3+Tab PLUS 247
耗散功率 500 W
漏源极电压Vds 500 V
上升时间 22 ns
输入电容Ciss 7000pF @25VVds
额定功率Max 500 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXFX48N50Q IXYS Semiconductor | 当前型号 | 当前型号 |
APT5010B2VFRG 美高森美 | 功能相似 | IXFX48N50Q和APT5010B2VFRG的区别 |
APT5010B2VRG 美高森美 | 功能相似 | IXFX48N50Q和APT5010B2VRG的区别 |
APT5010B2VR 美高森美 | 功能相似 | IXFX48N50Q和APT5010B2VR的区别 |