TO-264AA N-CH 200V 80A
Amplify electronic signals and switch between them with the help of Ixys Corporation"s power MOSFET. Its maximum power dissipation is 360000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
得捷:
MOSFET N-CH 200V 80A TO264AA
艾睿:
Trans MOSFET N-CH 200V 80A 3-Pin3+Tab TO-264AA
Chip1Stop:
Trans MOSFET N-CH 200V 80A 3-Pin3+Tab TO-264AA
Verical:
Trans MOSFET N-CH 200V 80A 3-Pin3+Tab TO-264AA
极性 N-CH
耗散功率 360 W
漏源极电压Vds 200 V
连续漏极电流Ids 80A
上升时间 55 ns
输入电容Ciss 5900pF @25VVds
额定功率Max 360 W
下降时间 26 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
封装 TO-264-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Last Time Buy
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free