TO-268 N-CH 300V 52A
Create an effective common drain amplifier using this power MOSFET from Ixys Corporation. Its maximum power dissipation is 360000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
得捷:
MOSFET N-CH 300V 52A TO268
贸泽:
MOSFET 300V 52A
艾睿:
Trans MOSFET N-CH Si 300V 52A 3-Pin2+Tab TO-268
Verical:
Trans MOSFET N-CH Si 300V 52A 3-Pin2+Tab TO-268
Win Source:
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
额定电压DC 300 V
额定电流 52.0 A
漏源极电阻 60.0 mΩ
极性 N-Channel
耗散功率 360 W
漏源极电压Vds 300 V
连续漏极电流Ids 52.0 A
上升时间 60 ns
输入电容Ciss 5300pF @25VVds
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-268-3
长度 16.05 mm
宽度 14 mm
高度 5.1 mm
封装 TO-268-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99