N沟道 100V 180A
N-Channel 100V 180A Tc 480W Tc Through Hole TO-220AB
立创商城:
N沟道 100V 180A
得捷:
MOSFET N-CH 100V 180A TO220AB
贸泽:
MOSFET MOSFET Id180 BVdass100
艾睿:
Compared to traditional transistors, IXTP180N10T power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 480000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Verical:
Trans MOSFET N-CH 100V 180A Automotive 3-Pin3+Tab TO-220
通道数 1
漏源极电阻 6.4 mΩ
极性 N-Channel
耗散功率 480 W
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 180 A
上升时间 54 ns
输入电容Ciss 6900pF @25VVds
额定功率Max 480 W
下降时间 31 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 480W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.66 mm
宽度 4.83 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXTP180N10T IXYS Semiconductor | 当前型号 | 当前型号 |
IXTA180N10T7 IXYS Semiconductor | 类似代替 | IXTP180N10T和IXTA180N10T7的区别 |
IXTA180N10T IXYS Semiconductor | 功能相似 | IXTP180N10T和IXTA180N10T的区别 |
IXTH180N10T IXYS Semiconductor | 功能相似 | IXTP180N10T和IXTH180N10T的区别 |