TO-247AD N-CH 600V 18A
N-Channel 600V 18A Tc 360W Tc Through Hole TO-247AD IXFH
得捷:
MOSFET N-CH 600V 18A TO247AD
艾睿:
This IXFH18N60P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 360000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 600V 18A 3-Pin3+Tab TO-247AD
Verical:
Trans MOSFET N-CH 600V 18A 3-Pin3+Tab TO-247AD
Win Source:
MOSFET N-CH 600V 18A TO-247
额定电压DC 600 V
额定电流 18.0 A
漏源极电阻 400 mΩ
极性 N-Channel
耗散功率 360 W
输入电容 2.50 nF
栅电荷 50.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 18.0 A
上升时间 22 ns
输入电容Ciss 2500pF @25VVds
额定功率Max 360 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFH18N60P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTQ18N60P IXYS Semiconductor | 类似代替 | IXFH18N60P和IXTQ18N60P的区别 |
IXFV18N60PS IXYS Semiconductor | 类似代替 | IXFH18N60P和IXFV18N60PS的区别 |
IXTV18N60P IXYS Semiconductor | 功能相似 | IXFH18N60P和IXTV18N60P的区别 |