D2PAK N-CH 150V 62A
N-Channel 150V 62A Tc 350W Tc Surface Mount TO-263 IXTA
得捷:
MOSFET N-CH 150V 62A TO263
贸泽:
MOSFET 62 Amps 150V 0.04 Rds
艾睿:
As an alternative to traditional transistors, the IXTA62N15P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 350000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
TME:
Transistor: N-MOSFET; unipolar; 150V; 62A; 350W; TO263
Verical:
Trans MOSFET N-CH 150V 62A 3-Pin2+Tab D2PAK
通道数 1
漏源极电阻 33 mΩ
极性 N-CH
耗散功率 350 W
阈值电压 5.5 V
漏源极电压Vds 150 V
漏源击穿电压 150 V
连续漏极电流Ids 62A
上升时间 38 ns
输入电容Ciss 2250pF @25VVds
下降时间 35 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 350W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 9.65 mm
宽度 10.41 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXTA62N15P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTP62N15P IXYS Semiconductor | 功能相似 | IXTA62N15P和IXTP62N15P的区别 |
IXTQ62N15P IXYS Semiconductor | 功能相似 | IXTA62N15P和IXTQ62N15P的区别 |
2SK3592-01SJ 富士电机 | 功能相似 | IXTA62N15P和2SK3592-01SJ的区别 |