IXTH48P20P

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IXTH48P20P概述

TO-247AD P-CH 200V 48A

通孔 P 通道 200 V 48A(Tc) 462W(Tc) TO-247(IXTH)


得捷:
MOSFET P-CH 200V 48A TO247


艾睿:
Make an effective common source amplifier using this IXTH48P20P power MOSFET from Ixys Corporation. Its maximum power dissipation is 462000 mW. This P channel MOSFET transistor operates in enhancement mode. This device is made with polarp technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Verical:
Trans MOSFET P-CH 200V 48A 3-Pin3+Tab TO-247AD


Win Source:
MOSFET P-CH 200V 48A TO-247


IXTH48P20P中文资料参数规格
技术参数

极性 P-CH

耗散功率 462 W

漏源极电压Vds 200 V

连续漏极电流Ids 48A

上升时间 46 ns

输入电容Ciss 5400pF @25VVds

下降时间 27 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 462W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

香港进出口证 NLR

数据手册

在线购买IXTH48P20P
型号: IXTH48P20P
制造商: IXYS Semiconductor
描述:TO-247AD P-CH 200V 48A
替代型号IXTH48P20P
型号/品牌 代替类型 替代型号对比

IXTH48P20P

IXYS Semiconductor

当前型号

当前型号

IXTT48P20P

IXYS Semiconductor

完全替代

IXTH48P20P和IXTT48P20P的区别

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