SOT-227B N-CH 70V 340A
N-Channel 70V 340A Tc 700W Tc Chassis Mount SOT-227B
得捷:
MOSFET N-CH 70V 340A SOT-227B
艾睿:
Compared to traditional transistors, IXFN340N07 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 700000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
富昌:
IXFN 系列 单 N 沟道 70 Vds 4 mOhm 700 W 功率 Mosfet - SOT-227B
TME:
Module; single transistor; Uds:70V; Id:100A; SOT227B; 700W; screw
Verical:
Trans MOSFET N-CH Si 70V 340A 4-Pin SOT-227B
Win Source:
MOSFET N-CH 70V 340A SOT-227B / N-Channel 70 V 340A Tc 700W Tc Chassis Mount SOT-227B
额定功率 700 W
通道数 1
极性 N-CH
耗散功率 700 W
阈值电压 4 V
漏源极电压Vds 70 V
连续漏极电流Ids 340A
上升时间 95 ns
输入电容Ciss 12200pF @25VVds
额定功率Max 700 W
下降时间 33 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 700W Tc
安装方式 Screw
引脚数 4
封装 SOT-227-4
宽度 25.42 mm
封装 SOT-227-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free