IXFN340N07

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IXFN340N07概述

SOT-227B N-CH 70V 340A

N-Channel 70V 340A Tc 700W Tc Chassis Mount SOT-227B


得捷:
MOSFET N-CH 70V 340A SOT-227B


艾睿:
Compared to traditional transistors, IXFN340N07 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 700000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.


富昌:
IXFN 系列 单 N 沟道 70 Vds 4 mOhm 700 W 功率 Mosfet - SOT-227B


TME:
Module; single transistor; Uds:70V; Id:100A; SOT227B; 700W; screw


Verical:
Trans MOSFET N-CH Si 70V 340A 4-Pin SOT-227B


Win Source:
MOSFET N-CH 70V 340A SOT-227B / N-Channel 70 V 340A Tc 700W Tc Chassis Mount SOT-227B


IXFN340N07中文资料参数规格
技术参数

额定功率 700 W

通道数 1

极性 N-CH

耗散功率 700 W

阈值电压 4 V

漏源极电压Vds 70 V

连续漏极电流Ids 340A

上升时间 95 ns

输入电容Ciss 12200pF @25VVds

额定功率Max 700 W

下降时间 33 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 700W Tc

封装参数

安装方式 Screw

引脚数 4

封装 SOT-227-4

外形尺寸

宽度 25.42 mm

封装 SOT-227-4

物理参数

材质 Silicon

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IXFN340N07
型号: IXFN340N07
制造商: IXYS Semiconductor
描述:SOT-227B N-CH 70V 340A

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