TO-268 N-CH 500V 26A
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family
Features
• International standard packages
• Low RDS onHDMOS™ process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching UIS rated
• Low package inductance
\- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
通道数 1
漏源极电阻 200 mΩ
极性 N-CH
耗散功率 300 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 26A
上升时间 33 ns
输入电容Ciss 4200pF @25VVds
下降时间 30 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
封装 TO-268-3
长度 16.05 mm
宽度 14 mm
高度 5.1 mm
封装 TO-268-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free