IXGH32N170

IXGH 系列 1700 Vce 75 A 45 ns ton 高速 IGBT - TO-247AD

IGBT 分立，IXYS

### IGBT 分立元件和模块，IXYS

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT 1700V 75A 350W TO247AD

欧时:
IXYS IXGH32N170 N沟道 IGBT, Vce=1700 V, 75 A, 3引脚 TO-247AD封装

e络盟:
单晶体管, IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 引脚

艾睿:
This IXGH32N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 1.7KV 75A 3-Pin3+Tab TO-247AD

Verical:
Trans IGBT Chip N-CH 1700V 75A 350000mW 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXGH32N170  IGBT, SINGLE, N-CH, 1.7KV, 75A, TO-247AD New

DeviceMart:
IGBT 1700V 75A TO-247AD