IXGT72N60A3

Trans IGBT Chip N-CH 600V 78A 540000mW 3Pin2+Tab TO-268

IXYS extends its GenX3™ insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT  process  and  utilize  IXYS’  advanced  Punch-Though  PT  technology,  tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

得捷:
IGBT 600V 75A 540W TO268

艾睿:
Trans IGBT Chip N-CH 600V 78A 540000mW 3-Pin2+Tab TO-268

Verical:
Trans IGBT Chip N-CH 600V 78A 540000mW 3-Pin2+Tab TO-268