IXGX120N60A3

Trans IGBT Chip N-CH 600V 200A 780000mW 3Pin3+Tab PLUS 247

IGBT PT 600 V 200 A 780 W 通孔

得捷:
IGBT 600V 200A 780W PLUS247

艾睿:
Use the IXGX120N60A3 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 780000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 600V 200A 780000mW 3-Pin3+Tab PLUS 247