IXGK64N60B3D1

Trans IGBT Chip N-CH 600V 64A 460000mW 3Pin3+Tab TO-264

IXYS extends its GenX3™ insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT  process  and  utilize  IXYS’  advanced  Punch-Though  PT  technology,  tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

得捷:
IGBT 600V 460W TO264

艾睿:
Trans IGBT Chip N-CH 600V 64A 460000mW 3-Pin3+Tab TO-264

Verical:
Trans IGBT Chip N-CH 600V 64A 460000mW 3-Pin3+Tab TO-264