IXBX75N170

Trans IGBT Chip N-CH 1700V 200A 1040000mW 3Pin3+Tab PLUS 247

IGBT - 1700 V 200 A 1040 W 通孔 PLUS247™-3

得捷:
IGBT 1700V 200A 1040W PLUS247

贸泽:
IGBT Transistors BIMOSFETS 1700V 200A

艾睿:
Minimize the current at your gate with the IXBX75N170 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 1040000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

DeviceMart:
IGBT BIMOSFET 1700V 200A PLUS247