Trans IGBT Chip N-CH 1200V 36A 180000mW 3Pin2+Tab D2PAK
IGBT PT 表面贴装型 TO-263（IXGA）
得捷:
IGBT 1200V 36A 180W TO263
艾睿:
The IXGA20N120B3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXGA20N120B3 IXYS Semiconductor | 当前型号 | 当前型号 |
IXGA12N60B IXYS Semiconductor | 类似代替 | IXGA20N120B3和IXGA12N60B的区别 |
IXGA16N60B2 IXYS Semiconductor | 类似代替 | IXGA20N120B3和IXGA16N60B2的区别 |
IXGA20N60B IXYS Semiconductor | 功能相似 | IXGA20N120B3和IXGA20N60B的区别 |