IXGT32N170

Trans IGBT Chip N-CH 1700V 75A 350000mW 3Pin2+Tab TO-268

Don"t be afraid to step up the amps in your device when using this IGBT transistor from Ixys Corporation. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

得捷:
IGBT 1700V 75A 350W TO268

贸泽:
IGBT Transistors 72 Amps 1700 V 3.3 V Rds

艾睿:
Don&s;t be afraid to step up the amps in your device when using this IXGT32N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Verical:
Trans IGBT Chip N-CH 1700V 75A 350000mW 3-Pin2+Tab TO-268

DeviceMart:
IGBT NPT 1700V 75A TO-268