IXYH40N120B3D1

IGBT 1200V 86A 480W 通孔 TO-247（IXYH）

You won"t need to worry about any lagging in your circuit with this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 480000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with xpt technology.