Trans IGBT Chip N-CH 1700V 10A 110000mW 3Pin2+Tab TO-268
The IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 110000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
得捷:
IGBT 1700V 10A 140W TO268
艾睿:
The IXGT10N170A IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 110000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Verical:
Trans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin2+Tab TO-268