IXBT6N170

Trans IGBT Chip N-CH 1700V 12A 75000mW 3Pin2+Tab TO-268

This IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

立创商城:
IXBT6N170

得捷:
IGBT 1700V 12A 75W TO268

贸泽:
IGBT Transistors 12 Amps 1700V 3.6 Rds

艾睿:
Trans IGBT Chip N-CH 1700V 12A 75000mW 3-Pin2+Tab TO-268

Verical:
Trans IGBT Chip N-CH 1700V 12A 75000mW 3-Pin2+Tab TO-268