Trans IGBT Chip N-CH 1200V 150A 660000mW 4Pin SOT-227B
Don"t be afraid to step up the amps in your device when using this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
得捷:
IGBT MOD 1200V 150A 660W SOT227B
艾睿:
Don&s;t be afraid to step up the amps in your device when using this IXDN75N120 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 150A 4-Pin SOT-227B
Verical:
Trans IGBT Chip N-CH 1200V 150A 660000mW 4-Pin SOT-227B
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXDN75N120 IXYS Semiconductor | 当前型号 | 当前型号 |
IXSN80N60BD1 IXYS Semiconductor | 类似代替 | IXDN75N120和IXSN80N60BD1的区别 |
IXSN62N60U1 IXYS Semiconductor | 类似代替 | IXDN75N120和IXSN62N60U1的区别 |
APT50GF120B2RG 美高森美 | 功能相似 | IXDN75N120和APT50GF120B2RG的区别 |