Trans IGBT Chip N-CH 3000V 50A 250000mW 3Pin3+Tab TO-247
This IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 3000 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
得捷:
IGBT 3000V 50A 250W TO247
艾睿:
This IXBH20N300 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 3000 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Verical:
Trans IGBT Chip N-CH 3KV 50A 3-Pin3+Tab TO-247