Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPW50R280CEFKSA1, 13 A, Vds=550 V, 3引脚 TO-247封装
CoolMOS™ CE 功率 MOSFET
得捷:
MOSFET N-CH 500V 13A TO247-3
欧时:
Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPW50R280CEFKSA1, 13 A, Vds=550 V, 3引脚 TO-247封装
e络盟:
功率场效应管, MOSFET, N沟道, 500 V, 18.1 A, 0.25 ohm, TO-247, 通孔
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPW50R280CEFKSA1 power MOSFET. Its maximum power dissipation is 92000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
TME:
Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Verical:
Trans MOSFET N-CH 550V 13A 3-Pin3+Tab TO-247 Tube
额定功率 92 W
针脚数 3
漏源极电阻 0.25 Ω
极性 N-CH
耗散功率 92 W
阈值电压 3 V
漏源极电压Vds 500 V
连续漏极电流Ids 13A
上升时间 6.4 ns
输入电容Ciss 773pF @100VVds
下降时间 7.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 92000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 16.13 mm
宽度 5.21 mm
高度 21.1 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free