INFINEON IPB60R299CPATMA1 功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.27 ohm, 10 V, 3 V
The IPB60R299CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching SMPS topologies.
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- Low figure-of-meritFOM RON x Qg
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- Extreme dV/dt rated
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- High peak current capability
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- Qualified according to JEDEC for target applications
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- Ultra low RDS ON
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- Very fast switching
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- Internal Rg very low
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- High current capability
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- Significant reduction of conduction and switching losses
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- High power density and efficiency for superior power conversion systems
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- Best-in-class performance ratio
额定功率 96 W
通道数 1
针脚数 3
漏源极电阻 0.27 Ω
极性 N-Channel
耗散功率 96 W
阈值电压 3 V
漏源极电压Vds 650 V
漏源击穿电压 600 V
连续漏极电流Ids 11.0 A
上升时间 5 ns
输入电容Ciss 1100pF @100VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 96000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Alternative Energy, Consumer Electronics, Communications & Networking, Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17