IPP320N20N3GXKSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP320N20N3GXKSA1, 34 A, Vds=200 V, 3引脚 TO-220封装

得捷:
MOSFET N-CH 200V 34A TO220-3

贸泽:
MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 200 V, 34 A, 0.028 ohm, TO-220, 通孔

艾睿:
Make an effective common source amplifier using this IPP320N20N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 136000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3

Verical:
Trans MOSFET N-CH 200V 34A 3-Pin3+Tab TO-220 Tube

Newark:
MOSFET Transistor, N Channel, 34 A, 200 V, 0.028 ohm, 10 V, 3 V