IPD031N06L3GATMA1

INFINEON  IPD031N06L3GATMA1  晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD031N06L3GATMA1, 100 A, Vds=60 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET N-CH 60V 100A TO252-3

立创商城:
IPD031N06L3GATMA1

贸泽:
MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 100 A, 0.0025 ohm, TO-252 DPAK, 表面安装

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; IPD031N06L3GATMA1 power MOSFET is for you. Its maximum power dissipation is 167000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

Chip1Stop:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab TO-252

TME:
Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD031N06L3GATMA1  MOSFET Transistor, N Channel, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V