IPW90R120C3FKSA1

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IPW90R120C3FKSA1概述

Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPW90R120C3FKSA1, 36 A, Vds=900 V, 3引脚 TO-247封装

CoolMOS™C3 功率 MOSFET


得捷:
MOSFET N-CH 900V 36A TO247-3 COO


欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPW90R120C3FKSA1, 36 A, Vds=900 V, 3引脚 TO-247封装


艾睿:
Increase the current or voltage in your circuit with this IPW90R120C3FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 417000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.


富昌:
IPW90R120C3 系列 900V 0.12 Ohm N沟道 CoolMOSTM 功率 晶体管-PG-TO-247-3


TME:
Transistor: N-MOSFET; unipolar; 900V; 23A; 417W; PG-TO247-3


Verical:
Trans MOSFET N-CH 900V 36A 3-Pin3+Tab TO-247 Tube


IPW90R120C3FKSA1中文资料参数规格
技术参数

额定功率 417 W

极性 N-Channel

耗散功率 417 W

漏源极电压Vds 900 V

连续漏极电流Ids 36.0 A

上升时间 20 ns

输入电容Ciss 6800pF @100VVds

下降时间 24 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 417 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247

外形尺寸

长度 16.13 mm

宽度 5.21 mm

高度 21.1 mm

封装 TO-247

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买IPW90R120C3FKSA1
型号: IPW90R120C3FKSA1
描述:Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPW90R120C3FKSA1, 36 A, Vds=900 V, 3引脚 TO-247封装

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