Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPW90R120C3FKSA1, 36 A, Vds=900 V, 3引脚 TO-247封装
CoolMOS™C3 功率 MOSFET
得捷:
MOSFET N-CH 900V 36A TO247-3 COO
欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPW90R120C3FKSA1, 36 A, Vds=900 V, 3引脚 TO-247封装
艾睿:
Increase the current or voltage in your circuit with this IPW90R120C3FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 417000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
富昌:
IPW90R120C3 系列 900V 0.12 Ohm N沟道 CoolMOSTM 功率 晶体管-PG-TO-247-3
TME:
Transistor: N-MOSFET; unipolar; 900V; 23A; 417W; PG-TO247-3
Verical:
Trans MOSFET N-CH 900V 36A 3-Pin3+Tab TO-247 Tube
额定功率 417 W
极性 N-Channel
耗散功率 417 W
漏源极电压Vds 900 V
连续漏极电流Ids 36.0 A
上升时间 20 ns
输入电容Ciss 6800pF @100VVds
下降时间 24 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 417 W
安装方式 Through Hole
引脚数 3
封装 TO-247
长度 16.13 mm
宽度 5.21 mm
高度 21.1 mm
封装 TO-247
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC