IPB65R660CFDATMA1

INFINEON  IPB65R660CFDATMA1  功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V

CoolMOS™ CFD 功率 MOSFET

得捷:
MOSFET N-CH 650V 6A D2PAK

欧时:
Infineon CoolMOS CFD 系列 Si N沟道 MOSFET IPB65R660CFDATMA1, 6 A, Vds=700 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2

艾睿:
Compared to traditional transistors, IPB65R660CFDATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 62500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos cfd2 technology.

富昌:
IPB65R660CFD 系列 650V 660mOhm N沟道 CoolMOSTM CFD2 功率 晶体管-PG-TO263-3

Chip1Stop:
Trans MOSFET N-CH 700V 6A Automotive 3-Pin2+Tab TO-263

TME:
Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3

Verical:
Trans MOSFET N-CH 650V 6A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
Power MOSFET, N Channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V