INFINEON IPB057N06NATMA1 晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V
OptiMOS™5 功率 MOSFET
得捷:
MOSFET N-CH 60V 17A/45A D2PAK
立创商城:
N沟道 60V 17A 45A
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB057N06NATMA1, 45 A, Vds=60 V, 3引脚 D2PAK TO-263封装
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPB057N06NATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3
Verical:
Trans MOSFET N-CH 60V 45A 3-Pin2+Tab D2PAK T/R
Newark:
# INFINEON IPB057N06NATMA1 MOSFET Transistor, N Channel, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V
额定功率 83 W
通道数 1
针脚数 3
漏源极电阻 0.0049 Ω
极性 N-Channel
耗散功率 83 W
阈值电压 2.8 V
漏源极电压Vds 60 V
连续漏极电流Ids 45A
上升时间 12 ns
输入电容Ciss 2000pF @30VVds
下降时间 7 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.31 mm
宽度 11.05 mm
高度 4.57 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Or-ing switches, Synchronous rectification, Isolated DC-DC converters
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17