IKA06N60T

IKA06N60T图片1
IKA06N60T图片2
IKA06N60T图片3
IKA06N60T图片4
IKA06N60T图片5
IKA06N60T图片6
IKA06N60T图片7
IKA06N60T概述

低损耗DUOPACK : IGBT的沟槽场终止和技术,软,恢复快反平行EMCON何二极管 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Summary of Features:

.
Lowest V cesat drop for lower conduction losses
.
Low switching losses
.
Easy parallel switching capability due to positive temperature coefficient in V cesat
.
Very soft, fast recovery anti-parallel Emitter Controlled Diode
.
High ruggedness, temperature stable behavior
.
Low EMI emissions
.
Low gate charge
.
Very tight parameter distribution

Benefits:

.
Highest efficiency – low conduction and switching losses
.
Comprehensive portfolio in 600V and 1200V for flexibility of design
.
High device reliability
IKA06N60T中文资料参数规格
技术参数

额定功率 28 W

耗散功率 28 W

击穿电压集电极-发射极 600 V

反向恢复时间 123 ns

额定功率Max 28 W

工作温度Max 175 ℃

工作温度Min -40 ℃

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.5 mm

宽度 4.7 mm

高度 9.7 mm

封装 TO-220-3

物理参数

工作温度 -40℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tube

制造应用 Other hard switching applications

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IKA06N60T
型号: IKA06N60T
描述:低损耗DUOPACK : IGBT的沟槽场终止和技术,软,恢复快反平行EMCON何二极管 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
替代型号IKA06N60T
型号/品牌 代替类型 替代型号对比

IKA06N60T

Infineon 英飞凌

当前型号

当前型号

IKW20N60T

英飞凌

功能相似

IKA06N60T和IKW20N60T的区别

IGW40T120

英飞凌

功能相似

IKA06N60T和IGW40T120的区别

IRG4PC40UDPBF

英飞凌

功能相似

IKA06N60T和IRG4PC40UDPBF的区别

锐单商城 - 一站式电子元器件采购平台