VISHAY IRFP260PBF. 场效应管, MOSFET, N沟道, 200V, 46A, TO-247AC
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
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- Dynamic dV/dt rating
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- Ease of paralleling
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- Repetitive avalanche rated
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- Isolated central mounting hole
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- Simple drive requirements
额定电压DC 200 V
额定电流 46.0 A
针脚数 3
漏源极电阻 0.055 Ω
极性 N-Channel
耗散功率 280 W
阈值电压 2 V
输入电容 5200pF @25V
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 46.0 A
上升时间 120 ns
输入电容Ciss 5200pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 280 W
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.82 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Commercial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFP260PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFP260NPBF 英飞凌 | 功能相似 | IRFP260PBF和IRFP260NPBF的区别 |